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ZXMHC10A07T8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ V GS =10V; T A =25°C (b) (d)
@ V GS =10V; T A =70°C (b) (d)
@ V GS =10V; T A =25°C (a) (d)
SYMBOL
V DSS
V GS
I D
N-channel
100
20
1.1
0.9
1.0
P-channel
-100
20
-0.9
-0.8
-0.8
UNIT
V
V
A
A
A
Pulsed Drain Current
(c)
I DM
5.2
-4.5
A
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at T A =25°C (a) (d)
Linear Derating Factor
I S
I SM
P D
2.3
5.2
1.3
10.4
-2.2
-4.5
A
A
W
mW/°C
Power Dissipation at T A =25°C
Linear Derating Factor
(b) (d)
P D
1.3
10.4
W
mW/°C
Operating and Storage Temperature Range
T j , T stg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a) (d)
R JA
94.5
°C/W
Junction to Ambient (b) (d)
R JA
73.3
°C/W
NOTES
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions, with
the heat sink split into two equal areas one for each drain connection.
(b) For a device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating on 50mm x 50mm x 1.6mm FR4 PCB, D= 0.02, pulse width = 300 s - pulse width limited by maximum junction temperature.
Refer to transiennt thermal impedance graph.
(d) For device with one active die.
ISSUE 2 - JUNE 2005
SEMICONDUCTORS
2
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